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| AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1414 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1414 is Pb-free (meets ROHS & Sony 259 specifications). AOL1414L is a Green Product ordering option. AOL1414 and AOL1414L are electrically identical. Ultra SO-8TM Top View Fits SOIC8 footprint ! Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5m (VGS = 10V) RDS(ON) < 7.5m (VGS = 4.5V) D D Bottom tab connected to drain G S S G Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25C TC=100C ID IDM IDSM IAR C Maximum 30 12 85 70 200 15 12 30 135 100 50 2.5 1.6 -55 to 175 Units V V Pulsed Drain Current Continuous Drain TA=25C Current G TA=70C Avalanche Current C Repetitive avalanche energy L=0.3mH Power Dissipation Power Dissipation B A A mJ W W C EAR PD PDSM TJ, TSTG TC=25C TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C Symbol A A t 10s Steady-State Steady-State RJA RJC Typ 19.5 48 1 Max 25 60 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1414 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 100 1.5 4.9 6.9 6 90 0.74 Min 30 0.002 1 5 100 2 6.5 8.3 7.5 1 85 2520 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Gate resistance Rg SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2100 536 165 0.95 19.7 3.6 7.9 5.9 11 36.2 12 35 33 1.5 24 VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 10 17 55 18 42 50 A: The value of R qJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in=25C 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. Continuous Drain CurTC Figures F. These curves are based T =100C on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming C a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: Dec. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 40 ID (A) 30 20 10 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 VGS=2.5V 3.5V 3V 40 ID(A) 30 25C 20 10 0 1 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1.5 3.5 125C 50 VDS=5V 60 7 6.5 VGS=4.5V RDS(ON) (m) 6 5.5 VGS=10V 5 4.5 4 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.8 ID=20A Normalized On-Resistance 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 1.0E+00 IS (A) 1.0E-01 25C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2 125C Continuous Drain Cur TC=25C 20 TC=100C 16 ID=20A RDS(ON) (m) 12 125C 8 4 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 500 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss VDS=15V ID=20A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Ciss 1000 250 10s Power (W) 1ms DC T J(Max)=175C T C=25C 100s 210 170 130 90 50 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) T J(Max)=175C T C=25C 100 ID (Amps) RDS(ON) limited 10 1 0.1 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Continuous Drain Cur TC=25C 10 TC=100C D=T /T on ZJC Normalized Transient Thermal Resistance T J,PK =T A+PDM.ZJA.RJA RJC=1.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse PD T on T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 ID(A), Peak Avalanche Current T A=25C Power Dissipation (W) 0.0001 0.001 0.01 80 60 40 20 0 0.00001 90 120 60 30 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 100 80 Power (W) 60 40 20 0 0.01 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Continuous Drain Cur TC=25C 10 TC=100C In descending order ZJA Normalized Transient Thermal Resistance D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=60C/W 0.0001 0.001 0.01 0.1 1 T on T 0.001 0.00001 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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